Optical spectroscopy of inverted electron populations in double-barrier resonant-tunnelling structures

Cockburn, J. W., Teissier, R. J., Skolnick, M. S., Buckle, Philip Derek ORCID: https://orcid.org/0000-0001-9508-7783, Whittaker, D. M., Willcox, A. R. K., Smith, G. W., Hill, G. and Pate, M. A. 1994. Optical spectroscopy of inverted electron populations in double-barrier resonant-tunnelling structures. Surface Science 305 (1-3) , pp. 375-379. 10.1016/0039-6028(94)90919-9

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Abstract

We present results of photoluminescence and electroluminescence spectroscopy carried out on GaAs/ Al0.33Ga0.67As double-barrier resonant-tunnelling structures having quantum wells of either 200 or 250 Å width. At high bias, luminescence recombination is observed from electrons in highly excited (n > 2) quantum-well (QW) states of the structures. Analysis of the luminescence intensities shows that when the structures are biased at the fourth electron resonance, a population inversion occurs between the n = 4 and n = 3 confined electron levels. In addition, when the 250 Å QW structure is biased at the fifth resonance, a population inversion occurs between the n = 5 and n = 4 confined levels. We show that such population inversions are explained by a rate-equation analysis of the excited-state populations.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0039-6028
Last Modified:	19 May 2023 01:41
URI:	https://orca.cardiff.ac.uk/id/eprint/37012

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