The development of milliKelvin Si bolometers for future X-ray array devices

Zammit, C. C., Sumner, T. J., Hepburn, I. D. and Ade, Peter A. R. ORCID: https://orcid.org/0000-0002-5127-0401 1991. The development of milliKelvin Si bolometers for future X-ray array devices. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 310 (1-2) , pp. 244-248. 10.1016/0168-9002(91)91036-U

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Abstract

Silicon bolometers are currently under development for milliKelvin operation; these devices are being produced using Si wafer fabrication technology. The design and performance of individual bolometers, using doped layers with a thickness in the range 0.2 to 2 μm are described. The use of epitaxial growth to replace ion implantation for improved performance is discussed. For future use in space based X-ray astronomy, such devices could be fabricated as complete one or two dimensional arrays with integrated isolation and support. The proposed fabrication method for such arrays is outlined.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QB Astronomy
Publisher:	Elsevier
ISSN:	0168-9002
Last Modified:	21 Oct 2022 10:28
URI:	https://orca.cardiff.ac.uk/id/eprint/40320

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