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Initial stages of molecular-beam epitaxy growth of GaN on 6H-SiC(0001)

Lu, J., Haworth, L., Westwood, David and Macdonald, John Emyr ORCID: 2001. Initial stages of molecular-beam epitaxy growth of GaN on 6H-SiC(0001). Applied Physics Letters 78 (8) , pp. 1080-1083. 10.1063/1.1350430

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We studied the atomic H etching of 6H-SiC substrates and the initial stages of GaN/6H-SiC molecular-beam epitaxy growth. Atomic H etched 6H-SiC(0001)Si and (000math)C surfaces show a (√×√)−R30° and a (1×1) reconstruction respectively, with 0.7±0.2 monolayers of remnant O on both surfaces. GaN/6H-SiC(0001)Si growth is initiated by the formation of islands that develop into flat-top terraces through coalescence. Growth steps of one or integer numbers of the GaN atomic bilayer height are observed. GaN grown on 6H-SiC(000math)C is rougher with islands of irregular shape. X-ray photoemission spectroscopy studies show that Si 2p and C 1s photoelectron inelastic mean free paths in GaN are 22±1 and 20±1 Å, respectively.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: KEYWORDS and PACS gallium compounds; III-V semiconductors; wide band gap semiconductors; semiconductor epitaxial layers; semiconductor growth; molecular beam epitaxial growth; surface reconstruction; sputter etching; island structure; surface topography; X-ray photoelectron spectra; silicon compounds
Additional Information: Pdf uploaded in accordance with publisher's policy at (accessed 21/02/2014).
Publisher: American Institute of Physics
ISSN: 0003-6951
Date of First Compliant Deposit: 30 March 2016
Last Modified: 07 May 2023 22:42

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