Growth and characterization of strain-symmetried Si/SiGe THz quantum cascade structures

Zhao, M., Ni, W.-X., Townsend, P., Lynch, Stephen Anthony ORCID: https://orcid.org/0000-0001-9818-2284, Paul, D. J., Hsu, C. C. and Chang, M. N. 2005. Growth and characterization of strain-symmetried Si/SiGe THz quantum cascade structures. Presented at: 2nd IEEE International Conference on Group 1V Photonics 2005, Antwerp, Belgium, 21-23 September 2005. 2nd IEEE International Conference on Group 1V Photonics. Piscataway, NJ: IEEE, pp. 10-12. 10.1109/GROUP4.2005.1516385

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Abstract

This study presents the growth of strain-symmetric Si/SiGe THz quantum cascade structures on virtual substrates with precise layer parameters, thick active region, and high material quality. Sample characterization is done using atomic force microscopy, high resolution X-ray diffraction, and transmission electron microscopy.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IEEE
ISBN:	0780390709
Last Modified:	24 Oct 2022 10:48
URI:	https://orca.cardiff.ac.uk/id/eprint/45936

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