Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature

Lynch, Stephen Anthony ORCID: https://orcid.org/0000-0001-9818-2284, Townsend, P., Paul, D. J., Bain, M., Gamble, H. S., Zhang, Jing, Ikonic, Z., Kelsall, R. W. and Harrison, Paul 2005. Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature. Presented at: 2nd IEEE International Conference on Group 1V Photonics 2005, Antwerp, Belgium, 21-23 September 2005. 2nd IEEE International Conference on Group 1V Photonics 2005. Piscataway, NJ: IEEE, pp. 13-16. 10.1109/GROUP4.2005.1516386

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Abstract

The emission and absorption characteristics of boron-doped and phosphorous-doped silicon at terahertz frequencies are investigated. Different doping concentrations are considered and individual terahertz optical transitions are identified. The effect of temperature is considered.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Additional Information:	DOI didn't work
Publisher:	IEEE
ISBN:	0780390709
Last Modified:	24 Oct 2022 10:48
URI:	https://orca.cardiff.ac.uk/id/eprint/45947

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