Schmicker, D., Hibma, T., Edwards, K. A., Howes, P. B., MacDonald, John Emyr ![]() |
Abstract
It is argued that the growth morphology of ultrathin metal films should fluctuate as a function of film thickness due to the quantum size effect. To verify this, the specularly reflected intensity of x-rays, electrons and He atoms has been measured during the growth of a thin Pb layer on top of an substrate at 100 K. Curiously enough, the expected variation is observed in the He atom and electron scattering data, but not in the x-ray reflectivity. Our explanation is that the differences in the heat of formation for successive atomic layers have a strong effect on the step density, but not on the occupancy of the layers at the low growth temperatures necessary to obtain layer-by-layer growth. This is backed up by the results of a Monte Carlo simulation.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Uncontrolled Keywords: | surfaces; interfaces; thin films |
Publisher: | IOP Publishing |
ISSN: | 0953-8984 |
Last Modified: | 24 Oct 2022 10:48 |
URI: | https://orca.cardiff.ac.uk/id/eprint/45956 |
Citation Data
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