The growth and atomic structure of the Si(1 1 1)-indium interface studied by surface X-ray diffraction

Finney, M. S., Norris, C., Howes, P. B., James, M. A., MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692, Johnson, A. D. and Vlieg, E. 1994. The growth and atomic structure of the Si(1 1 1)-indium interface studied by surface X-ray diffraction. Physica B: Condensed matter 198 (1-3) , pp. 246-248. 10.1016/0921-4526(94)90171-6

Full text not available from this repository.

Abstract

Surface X-ray diffraction has been used to monitor the growth of indium on silicon (1 1 1) as a function of temperature and to determine the atomic structure of the Si(1 1 1) 4 × 1-In reconstruction. The results indicate there are four indium atoms per 4 × 1 unit mesh with an average near neighbour separation which is reduced from that of the indium bulk.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0921-4526
Last Modified:	24 Oct 2022 10:49
URI:	https://orca.cardiff.ac.uk/id/eprint/45964

Citation Data

Cited 23 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item