Lohmeier, Martin, van der Vegt, H. A., van Silfhout, R. G., Vlieg, E., Thornton, J. M. C., MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 and Scholte, P. M. L. O. 1992. Asymmetrical dimers on the Ge(001)-2 × 1-Sb surface observed using X-ray diffraction. Surface Science 275 (3) , pp. 190-200. 10.1016/0039-6028(92)90793-6 |
Official URL: http://dx.doi.org/10.1016/0039-6028(92)90793-6
Abstract
The atomic structure of the 2 × 1 reconstruction induced by the adsorption of Sb on Ge(001) has been determined by X-ray diffraction. Sb can be grown on Ge(001) in large ordered domains at elevated temperatures. SbSb dimers replace the Ge dimers of the clean Ge(001) surface and pick up all dangling bonds. The dimers have a bond length of 2.90 Å and are midpoint-shifted by 0.16 Å with respect to the substrate bulk unit cell. Such an asymmetric dimer is reported for the first time for a group IV/V system. Relaxations of the four topmost substrate layers are measured as well, and these compare favourably to elastic strain calculations.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Publisher: | Elsevier |
ISSN: | 0039-6028 |
Last Modified: | 24 Oct 2022 10:51 |
URI: | https://orca.cardiff.ac.uk/id/eprint/46133 |
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