Asymmetrical dimers on the Ge(001)-2 × 1-Sb surface observed using X-ray diffraction

Lohmeier, Martin, van der Vegt, H. A., van Silfhout, R. G., Vlieg, E., Thornton, J. M. C., MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 and Scholte, P. M. L. O. 1992. Asymmetrical dimers on the Ge(001)-2 × 1-Sb surface observed using X-ray diffraction. Surface Science 275 (3) , pp. 190-200. 10.1016/0039-6028(92)90793-6

Full text not available from this repository.

Abstract

The atomic structure of the 2 × 1 reconstruction induced by the adsorption of Sb on Ge(001) has been determined by X-ray diffraction. Sb can be grown on Ge(001) in large ordered domains at elevated temperatures. SbSb dimers replace the Ge dimers of the clean Ge(001) surface and pick up all dangling bonds. The dimers have a bond length of 2.90 Å and are midpoint-shifted by 0.16 Å with respect to the substrate bulk unit cell. Such an asymmetric dimer is reported for the first time for a group IV/V system. Relaxations of the four topmost substrate layers are measured as well, and these compare favourably to elastic strain calculations.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0039-6028
Last Modified:	24 Oct 2022 10:51
URI:	https://orca.cardiff.ac.uk/id/eprint/46133

Actions (repository staff only)

Edit Item