The growth and characterisation of epitaxial insulating HoF3 layers on silicon

Griffiths, C. L., MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 and Williams, R. H. 1992. The growth and characterisation of epitaxial insulating HoF3 layers on silicon. Applied Surface Science 56-58 (2) , pp. 782-788. 10.1016/0169-4332(92)90338-X

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Abstract

The growth of single-crystal layers of HoF1 on Si(100) and Si(111) atomatically clean surfaces has been studied by means of a surface science approach coupled with X-ray diffraction. Investigations of chemical interactions indicate the formation of Sisingle bondHo bonds and suggest the creation of a volatile fluoride. Film thicknesses above about 12Åwere relaxed leading to a multidomain orthorhombic structure, whereas for thicknesses less than this a pseudomorphic strained layer tysonite structure may be observed Band gaps and discontinuities are also discussed.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0169-4332
Last Modified:	24 Oct 2022 10:51
URI:	https://orca.cardiff.ac.uk/id/eprint/46134

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