Growth of pseudomorphic insulating HoF3 layers on Si(111)

Griffiths, C. L., MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 and Williams, R. H. 1991. Growth of pseudomorphic insulating HoF3 layers on Si(111). Journal of Applied Physics 70 (3) , pp. 1858-1861. 10.1063/1.349506

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Abstract

We report the successful growth of pseudomorphic, trigonal structured HoF3 insulating layers, stable at room temperature, on the Si(111) surface. Normally the tysonite structure is only stable at temperatures above 1070 °C [R. E. Thoma and G. D. Brunton, Sov. Phys. Crystallogr. 18, 473 (1966)]. A phase transition to the lower‐temperature orthorhombic structure is observed for a thickness of around 12 Å, consistent with the relaxation of elastic strain in the insulating layer.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Holmium Fluorides; Layers; Silicon; Growth; Epitaxy; Electrical Insulators; Medium Temperature; Electron Diffraction; Trigonal Lattices; Crystal−phase Transformations; Orthorhombic Lattices; Relaxation; Strains
Additional Information:	Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0021-8979/ (accessed 21/02/2014).
Publisher:	American Institute of Physics
ISSN:	0021-8979
Date of First Compliant Deposit:	30 March 2016
Last Modified:	17 May 2023 09:51
URI:	https://orca.cardiff.ac.uk/id/eprint/46141

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