X-ray reflectivity of an Sb delta-doping layer in silicon

Slijkerman, W. F. J., Gay, J. M., Zagwijn, P. M., van der Veen, J. F., MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692, Williams, A. A., Gravesteijn, D. J. and van de Walle, G. F. A. 1990. X-ray reflectivity of an Sb delta-doping layer in silicon. Journal of Applied Physics 68 (10) , pp. 5105-5109. 10.1063/1.347047

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Abstract

X‐ray reflectivity measurements were made on Si(001) crystals containing a delta‐doping layer of Sb atoms a few nanometers below the surface. The measurements show the Sb doping profile to be abrupt towards the substrate side of the sample and to decay towards the surface with a characteristic decay length of 1.01 nm.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Antimony; Silicon; Reflectivity; X Radiation; Doping Profiles
Additional Information:	Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0021-8979/ (accessed 21/02/2014).
Publisher:	American Institute of Physics
ISSN:	0021-8979
Date of First Compliant Deposit:	30 March 2016
Last Modified:	21 May 2023 23:30
URI:	https://orca.cardiff.ac.uk/id/eprint/46143

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