Slijkerman, W. F. J., Gay, J. M., Zagwijn, P. M., van der Veen, J. F., MacDonald, John Emyr  ORCID: https://orcid.org/0000-0001-5504-1692, Williams, A. A., Gravesteijn, D. J. and van de Walle, G. F. A.
1990.
X-ray reflectivity of an Sb delta-doping layer in silicon.
Journal of Applied Physics
68
(10)
, pp. 5105-5109.
10.1063/1.347047
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Official URL: http://dx.doi.org/10.1063/1.347047
Abstract
X‐ray reflectivity measurements were made on Si(001) crystals containing a delta‐doping layer of Sb atoms a few nanometers below the surface. The measurements show the Sb doping profile to be abrupt towards the substrate side of the sample and to decay towards the surface with a characteristic decay length of 1.01 nm.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Subjects: | Q Science > QC Physics |
| Uncontrolled Keywords: | Antimony; Silicon; Reflectivity; X Radiation; Doping Profiles |
| Additional Information: | Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0021-8979/ (accessed 21/02/2014). |
| Publisher: | American Institute of Physics |
| ISSN: | 0021-8979 |
| Date of First Compliant Deposit: | 30 March 2016 |
| Last Modified: | 21 May 2023 23:30 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/46143 |
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