Characterization of a two-dimensional electron gas in an InSb/InAlSb heterostructure using surface acoustic wave attenuation

Nash, G. R., Bending, S. J., Buckle, Philip Derek ORCID: https://orcid.org/0000-0001-9508-7783, Morgan, D. P., Burke, T. M. and Ashley, T. 2002. Characterization of a two-dimensional electron gas in an InSb/InAlSb heterostructure using surface acoustic wave attenuation. Semiconductor Science and Technology 17 (10) , pp. 1111-1114. 10.1088/0268-1242/17/10/314

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Abstract

We have investigated the interaction between a surface acoustic wave (SAW) and the two-dimensional electron gas formed at the interface of InSb/InAlSb heterojunctions. The samples were grown by molecular beam epitaxy on (100) SI GaAs substrates. Measurements were performed with the SAW travelling along the [110] direction, and a numerical approach was used to calculate the appropriate SAW coefficients. Along [110] a leaky SAW solution exists, with a piezoelectric coupling coefficient K2eff of 3.52 × 10−4, and velocity of 2680 m s−1. At high magnetic fields Shubnikov–de Haas-like oscillations were observed in the SAW attenuation and phase shift that reflect the oscillating magnetoresistance, and a quantitative analysis of the oscillations yields reasonable values for the electron concentrations. The best defined oscillations were observed in measurements on the sample with the lowest doping.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IOP Publishing
ISSN:	0268-1242
Last Modified:	19 May 2023 01:41
URI:	https://orca.cardiff.ac.uk/id/eprint/46193

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