High density, spatially separated electron/hole plasmas in mixed type I-type II GaAs/AlAs heterostructures

Buckle, Philip Derek ORCID: https://orcid.org/0000-0001-9508-7783 and Dawson, P. 1996. High density, spatially separated electron/hole plasmas in mixed type I-type II GaAs/AlAs heterostructures. Surface Science 361-2 , pp. 431-434. 10.1016/0039-6028(96)00438-4

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Abstract

By the choice of appropriate layer thicknesses in the GaAs/AlAs materials system it is possible to create a mixed type I–type II band alignment. In such structures rapid electron scattering leads to a long-lived spatially separated electron/hole plasma. In this paper we report measurements on such a structure and present evidence that it is possible to optically excite a two-dimensional electron gas at the GaAs/AlAs interface.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Gallium arsenide; Heterojunctions; Photoluminescence; Semiconductor-semiconductor heterostructures
Publisher:	Elsevier
ISSN:	0039-6028
Last Modified:	19 May 2023 01:41
URI:	https://orca.cardiff.ac.uk/id/eprint/46202

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