One-dimensional conductance in surface gated InSb/AlInSb quantum well heterostructures

Orr, J. M. S., Buckle, Philip Derek ORCID: https://orcid.org/0000-0001-9508-7783, Fearn, M., Bartlett, C. J., Buckle, L. and Ashley, T. 2007. One-dimensional conductance in surface gated InSb/AlInSb quantum well heterostructures. Presented at: 28th International Conference on the Physics of Semiconductors - ICPS 2006, Vienna, Austria, 24-28 July 2006. Published in: Jantsch, W. and Schäffler, F. eds. Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP Conference Proceedings (893) Melville, NY: American Institute of Physics, pp. 729-730. 10.1063/1.2730097

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Abstract

Low temperature quantised conductance effects in InSb/AlInSb heterostructures are reported. The one‐dimensional confinement is provided by metal Schottky split‐gate structures patterned directly onto the material surface. Extremely low Schottky barrier leakage is demonstrated for these devices, in part due to the air bridge gate arrangement implemented. Up to seven quantised energy subbands are discerned in the conductance of the devices as a function of increasingly negative gate bias.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	semiconductor quantum wells, III-V semiconductors, indium compounds, antimony compounds, aluminium compounds, one-dimensional conductivity, Schottky barriers
Publisher:	American Institute of Physics
ISBN:	9780735403970
Last Modified:	19 May 2023 01:41
URI:	https://orca.cardiff.ac.uk/id/eprint/46262

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