van Silfhout, R. G., Frenken, J. W. M., van der Veen, J. F., Ferrer, S., Johnson, A., Derbyshire, H., Norris, C. and MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 1989. In situ x-ray scattering studies of the deposition of Ge atoms on Ge (111). Journal de Physique Colloques 50 (C7) , pp. 295-300. 10.1051/jphyscol:1989731 |
Official URL: http://dx.doi.org/10.1051/jphyscol:1989731
Abstract
The nucleation of Ge on Ge(111) has been studied by X-ray reflectivity during deposition in ultrahigh vacuum. Measurements of the specularly reflected intensity as a function of the angle of incidence reveal the distribution of terrace heights on the surface during growth of the Ge(111) crystal. A quantitative analysis using kinematical scattering theory shows that, for a substrate temperature of 200 °C, the growth proceeds predominantly layer by layer but that there is some roughening. The roughening is described by a model which includes three incomplete terrace levels. Using this model we are able to determine the occupation of the three topmost levels as a function of the total deposited amount.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Additional Information: | Proceedings of the International Conference on Surface and Thin Film studies using Glancing-Incidence X-ray and Neutron Scattering |
Publisher: | EDP Sciences |
ISSN: | 0302-0738 |
Last Modified: | 24 Oct 2022 11:21 |
URI: | https://orca.cardiff.ac.uk/id/eprint/47810 |
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