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In situ x-ray scattering studies of the deposition of Ge atoms on Ge (111)

van Silfhout, R. G., Frenken, J. W. M., van der Veen, J. F., Ferrer, S., Johnson, A., Derbyshire, H., Norris, C. and MacDonald, John Emyr ORCID: 1989. In situ x-ray scattering studies of the deposition of Ge atoms on Ge (111). Journal de Physique Colloques 50 (C7) , pp. 295-300. 10.1051/jphyscol:1989731

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The nucleation of Ge on Ge(111) has been studied by X-ray reflectivity during deposition in ultrahigh vacuum. Measurements of the specularly reflected intensity as a function of the angle of incidence reveal the distribution of terrace heights on the surface during growth of the Ge(111) crystal. A quantitative analysis using kinematical scattering theory shows that, for a substrate temperature of 200 °C, the growth proceeds predominantly layer by layer but that there is some roughening. The roughening is described by a model which includes three incomplete terrace levels. Using this model we are able to determine the occupation of the three topmost levels as a function of the total deposited amount.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Additional Information: Proceedings of the International Conference on Surface and Thin Film studies using Glancing-Incidence X-ray and Neutron Scattering
Publisher: EDP Sciences
ISSN: 0302-0738
Last Modified: 24 Oct 2022 11:21

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