Composition dependence of the energy barrier for lithium diffusion in amorphous WO3

Gracia, L., Garcia Canadas, Jorge, Garcia-Belmonte, G., Beltran, A., Andres, J. and Bisquert, J. 2005. Composition dependence of the energy barrier for lithium diffusion in amorphous WO3. Electrochemical and Solid-State Letters 8 (10) , J21-J23. 10.1149/1.2008868

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Abstract

Lithium insertion into amorphous Formula films prepared by the electron beam evaporation technique was investigated by measurements of voltage-composition curve and chemical diffusion coefficient. The extraction of equilibrium and kinetic parameters allows the determination of the jump diffusion coefficient dependence on composition. In addition, first-principles calculations combining a pseudopotential plane wave scheme have been performed with the aim of providing a better understanding of the dependence of the potential barrier height for the hopping pathway with the insertion level for crystalline compounds. Our results predict a lowering of the barrier height for less doped systems and both experiments and simulations exhibit a relation of the type Formula for the composition range Formula[ ].

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Subjects:	Q Science > QD Chemistry T Technology > TA Engineering (General). Civil engineering (General)
Uncontrolled Keywords:	tungsten compounds; lithium; semiconductor thin films; amorphous semiconductors; diffusion; vacuum deposition; electron beam deposition; ab initio calculations; association
Publisher:	ECS
ISSN:	1099-0062
Last Modified:	19 Mar 2016 23:21
URI:	https://orca.cardiff.ac.uk/id/eprint/48411

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