Running droplets of gallium from evaporation of gallium arsenide

Tersoff, J., Jesson, David E. ORCID: https://orcid.org/0000-0003-0897-1445 and Tang, Wen-Xin 2009. Running droplets of gallium from evaporation of gallium arsenide. Science 324 (5924) , pp. 236-238. 10.1126/science.1169546

Full text not available from this repository.

Abstract

High-temperature annealing of gallium arsenide in vacuum causes excess evaporation of arsenic, with accumulation of gallium as liquid droplets on the surface. Using real-time in situ surface electron microscopy, we found that these droplets spontaneously run across the crystal surface. Running droplets have been seen in many systems, but they typically require special surface preparation or gradient forces. In contrast, we show that noncongruent evaporation automatically provides a driving force for running droplets. The motion is predicted and observed to slow and stop near a characteristic temperature, with the speed increasing both below and above this temperature. The same behavior is expected to occur during the evaporation of similar III-V semiconductors such as indium arsenide.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Association for the Advancement of Science
ISSN:	0036-8075
Last Modified:	10 Jul 2024 19:16
URI:	https://orca.cardiff.ac.uk/id/eprint/48798

Citation Data

Cited 137 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item