Decomposition controlled by surface morphology during Langmuir evaporation of GaAs

Tersoff, J., Jesson, David E. ORCID: https://orcid.org/0000-0003-0897-1445 and Tang, Wen-Xin 2010. Decomposition controlled by surface morphology during Langmuir evaporation of GaAs. Physical Review Letters 105 (3) , 035702. 10.1103/PhysRevLett.105.035702

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Abstract

When GaAs is heated in vacuum, it decomposes into Ga and As as it evaporates. Real-time in situ surface electron microscopy reveals striking bursts of “daughter” droplet nucleation and growth when coalescence of large “parent” droplets exposes nonplanar surface regions. We analyze the behavior, predicting a morphology-dependent congruent evaporation temperature. Based on this we propose a new approach for the self-assembly and positioning of quantum structures via droplet epitaxy, which we demonstrate at the proof-of-concept level.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Physical Society
ISSN:	0031-9007
Last Modified:	10 Jul 2024 19:16
URI:	https://orca.cardiff.ac.uk/id/eprint/48799

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