Linewidth enhancement factor in InGaAs quantum-dot amplifiers

Schneider, S., Borri, Paola ORCID: https://orcid.org/0000-0002-7873-3314, Langbein, Wolfgang Werner ORCID: https://orcid.org/0000-0001-9786-1023, Woggon, U., Sellin, R. L., Ouyang, D. and Bimberg, D. 2004. Linewidth enhancement factor in InGaAs quantum-dot amplifiers. IEEE Journal of Quantum Electronics 40 (10) , pp. 1423-1429. 10.1109/JQE.2004.834779

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Abstract

We report systematic measurements of the linewidth enhancement factor (LEF) in an electrically pumped InGaAs quantum-dot (QD) amplifier in the temperature range from 50 K to room temperature. At injection currents below transparency, the value of the linewidth enhancement factor of the ground-state interband (excitonic) transition is between 0.4 and 1, and increases with increasing carrier density. Additionally, we investigate the spectral dependence of the LEF by tuning the wavelength of our optical probe from below resonance with the ground state of the QDs up to resonance with the first optically active excited-state transition. We find a decrease of the LEF with increasing photon energy at all investigated temperatures.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Amplifiers; QDs; quantum dots; semiconductor devices; semiconductor lasers; spectroscopy
Publisher:	IEEE
ISSN:	0018-9197
Last Modified:	10 Jul 2024 19:17
URI:	https://orca.cardiff.ac.uk/id/eprint/48841

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