Dephasing of biexcitons in InGaAs quantum dots

Borri, Paola ORCID: https://orcid.org/0000-0002-7873-3314, Langbein, Wolfgang Werner ORCID: https://orcid.org/0000-0001-9786-1023, Schneider, S., Woggon, U., Sellin, R. L., Ouyang, D. and Bimberg, D. 2003. Dephasing of biexcitons in InGaAs quantum dots. physica status solidi (b) 238 (3) , pp. 593-600. 10.1002/pssb.200303177

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Abstract

We present measurements of the dephasing time of biexcitonic transitions in self-organized InGaAs quantum dots in the temperature range from 10 K to 70 K. We use an heterodyne four-wave mixing technique that allows direct measurement of the dephasing time in an inhomogeneously broadened quantum-dot ensemble. By applying an electrical injection, we progressively increase the number of carriers in the quantum dots and investigate the passage from a four-wave mixing response dominated by the one-exciton transition to a response dominated by biexcitonic and multiexcitonic transitions. The temperature dependence of the homogeneous broadening of the biexciton-to-exciton transition is extrapolated to zero injection current and its physical origin in terms of radiative recombination and phonon interactions is discussed.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Biosciences Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Wiley-Blackwell
ISSN:	0370-1972
Last Modified:	10 Jul 2024 19:18
URI:	https://orca.cardiff.ac.uk/id/eprint/48858

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