Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Dephasing of biexcitons in InGaAs quantum dots

Borri, Paola ORCID:, Langbein, Wolfgang Werner ORCID:, Schneider, S., Woggon, U., Sellin, R. L., Ouyang, D. and Bimberg, D. 2003. Dephasing of biexcitons in InGaAs quantum dots. physica status solidi (b) 238 (3) , pp. 593-600. 10.1002/pssb.200303177

Full text not available from this repository.


We present measurements of the dephasing time of biexcitonic transitions in self-organized InGaAs quantum dots in the temperature range from 10 K to 70 K. We use an heterodyne four-wave mixing technique that allows direct measurement of the dephasing time in an inhomogeneously broadened quantum-dot ensemble. By applying an electrical injection, we progressively increase the number of carriers in the quantum dots and investigate the passage from a four-wave mixing response dominated by the one-exciton transition to a response dominated by biexcitonic and multiexcitonic transitions. The temperature dependence of the homogeneous broadening of the biexciton-to-exciton transition is extrapolated to zero injection current and its physical origin in terms of radiative recombination and phonon interactions is discussed.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Wiley-Blackwell
ISSN: 0370-1972
Last Modified: 10 Nov 2022 13:38

Citation Data

Cited 4 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item