Exciton relaxation and dephasing in quantum-dot amplifiers from room to cryogenic temperature

Borri, Paola ORCID: https://orcid.org/0000-0002-7873-3314, Langbein, Wolfgang Werner ORCID: https://orcid.org/0000-0001-9786-1023, Schneider, S., Woggon, U., Sellin, R. L., Ouyang, D. and Bimberg, D. 2002. Exciton relaxation and dephasing in quantum-dot amplifiers from room to cryogenic temperature. IEEE Journal of Selected Topics in Quantum Electronics 8 (5) , pp. 984-991. 10.1109/JSTQE.2002.804250

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Abstract

We present an extensive experimental study of the exciton relaxation and dephasing in InGaAs quantum dots (QDs) in the temperature range from 10 K to 295 K. The QDs are embedded in the active region of an electrically pumped semiconductor optical amplifier. Ultrafast four-wave mixing and differential transmission spectroscopy on the dot ground-state transition are performed with a sensitive heterodyne detection technique. The importance of the population relaxation dynamics to the dephasing is determined as a function of injection current and temperature. Above 150 K dephasing processes much faster than the population relaxation are present, due to both carrier-phonon scattering and Coulomb interaction with the injected carriers. Only at low temperatures (<30 K) does population relaxation of multiexcitons in the gain regime fully determine the dephasing.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IEEE
ISSN:	1077-260X
Last Modified:	10 Jul 2024 19:18
URI:	https://orca.cardiff.ac.uk/id/eprint/48863

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