Cesari, Valentina, Langbein, Wolfgang Werner  ORCID: https://orcid.org/0000-0001-9786-1023, Borri, Paola ORCID: https://orcid.org/0000-0002-7873-3314, Rossetti, Marco, Fiore, Andrea, Mikhrin, S., Krestnikov, I. and Kovsh, A.
2007.
Ultrafast gain dynamics in 1.3um InAs/GaAs quantum-dot optical amplifiers: The effect of p doping.
Applied Physics Letters
90
(20)
, 201103.
10.1063/1.2739079
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Abstract
Ultrafast gain dynamics of the ground-state transition are measured in electrically pumped InAs/GaAs quantum-dot amplifiers emitting near 1.3 μm at room temperature. Gain recovery on a subpicosecond time scale occurs at high electrical injection. However, when comparing p-doped and undoped devices fabricated under identical conditions and operating at the same gain, faster absorption recovery but slower gain dynamics are observed in p-doped amplifiers. The slower gain dynamics is attributed to a reduced reservoir of excited-state electrons in p-doped quantum-dot devices, which limits the recovery of the electron ground-state occupation mediated by intradot carrier-carrier scattering.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Subjects: | Q Science > QC Physics |
| Uncontrolled Keywords: | semiconductor optical amplifiers, quantum dot lasers, high-speed optical techniques, semiconductor doping, ground states, indium compounds, gallium arsenide, III-V semiconductors, laser transitions |
| Additional Information: | Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 20/02/2014). |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| Date of First Compliant Deposit: | 30 March 2016 |
| Last Modified: | 10 Jul 2024 19:20 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/48923 |
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