Zheng, C. X., Tang, Wen-Xin and Jesson, David E. ![]() |
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Official URL: http://dx.doi.org/10.1063/1.3684616
Abstract
Coalescence of droplets during reactive wetting is investigated for the liquid Ga/GaAs(001) system. In situmirror electron microscopy reveals that coalescence predominantly involves the motion of one reactive droplet relative to the other. This behaviour differs significantly from coalescence in non-reactive systems and is associated with contact line pinning at a ridge/etch pit edge which is identified using atomic force microscopy and selective etching. A simple geometrical model is presented to describe the pinning.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Additional Information: | Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 20/02/2014). |
Publisher: | American Institute of Physics |
ISSN: | 0003-6951 |
Date of First Compliant Deposit: | 30 March 2016 |
Last Modified: | 28 May 2023 16:42 |
URI: | https://orca.cardiff.ac.uk/id/eprint/52394 |
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