Rodriguez-Madrid, J. G., Iriarte, G. F., Pedros, J., Williams, Oliver Aneurin ![]() |
Official URL: http://dx.doi.org/10.1109/LED.2012.2183851
Abstract
This letter describes the procedure to manufacture high-performance surface acoustic wave (SAW) resonators on AlN/diamond heterostructures working at frequencies beyond 10 GHz. In the design of SAW devices on AlN/diamond systems, the thickness of the piezoelectric layer is a key parameter. The influence of the film thickness on the SAW device response has been studied. Optimized thin films combined with advanced e-beam lithographic techniques have allowed the fabrication of one-port SAW resonators with finger width and pitch of 200 nm operating in the 10-14 GHz range with up to 36 dB out-of-band rejection.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Uncontrolled Keywords: | AlN/diamond; super-high-frequency band; surface acoustic wave (SAW) resonator; thickness influence |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 0741-3106 |
Funders: | EPSRC |
Last Modified: | 25 Oct 2022 08:20 |
URI: | https://orca.cardiff.ac.uk/id/eprint/52425 |
Citation Data
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