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Optical properties of InP/GaInP quantum-dot laser structures

Lewis, Gareth Michael, Lutti, Julie, Smowton, Peter Michael ORCID:, Blood, Peter, Krysa, A. B. and Liew, S. L. 2004. Optical properties of InP/GaInP quantum-dot laser structures. Applied Physics Letters 85 (11) , pp. 1904-1906. 10.1063/1.1794379

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We have grown InP quantum dots with different rates and on substrates with different orientations. The growth conditions have a major influence on the form of the gain spectrum. Using a high growth rate on a 10 off (100) substrate we obtain a broad gain spectrum due to contributions from a bimodal dot size distribution whereas a sample containing mostly small dots, produced using (211) B substrates, has a narrower gain spectrum centered at a shorter wavelength of ~700-710nm. The modal gain saturates at a magnitude significantly smaller than the modal absorption, nevertheless the measured values of modal gain are sufficient to sustain laser action, and structures grown at high growth rate on 10 off (100) substrates are capable of providing laser devices operating in the region of 750nm.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Additional Information: Pdf uploaded in accordance with publisher's policy at (accessed 21/02/2014).
Publisher: American Institute of Physics
ISSN: 0003-6951
Date of First Compliant Deposit: 30 March 2016
Last Modified: 10 May 2023 19:31

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