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Encapsulation of Au nanoparticles on a silicon wafer during thermal oxidation

Bowker, Michael ORCID:, Crouch, Jonathan James, Carley, Albert Frederick, Davies, Philip Rosser ORCID:, Morgan, David John ORCID:, Lalev, Georgi, Dimov, Stefan Simeonov and Pham, Duc Truong 2013. Encapsulation of Au nanoparticles on a silicon wafer during thermal oxidation. Journal of Physical Chemistry C 117 (41) , pp. 21577-21582. 10.1021/jp4074043

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We report the behavior of Au nanoparticles anchored onto a Si(111) substrate and the evolution of the combined structure with annealing and oxidation. Au nanoparticles, formed by annealing a Au film, appear to “float” upon a growing layer of SiO2 during oxidation at high temperature, yet they also tend to become partially encapsulated by the growing silica layers. It is proposed that this occurs largely because of the differential growth rates of the silica layer on the silicon substrate between the particles and below the particles due to limited access of oxygen to the latter. This in turn is due to a combination of blockage of oxygen adsorption by the Au and limited oxygen diffusion under the gold. We think that such behavior is likely to be seen for other metal–semiconductor systems.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Cardiff Catalysis Institute (CCI)
Subjects: Q Science > QD Chemistry
Publisher: ACS Publications
ISSN: 1932-7447
Funders: EPSRC
Date of First Compliant Deposit: 30 March 2016
Last Modified: 11 Oct 2023 19:17

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