Ultrafast carrier dynamics in p-doped InAs/GaAs quantum-dot amplifiers

Cesari, Valentina, Borri, Paola ORCID: https://orcid.org/0000-0002-7873-3314, Fiore, A., Rossetti, M., Mikhrin, S., Langbein, Wolfgang Werner ORCID: https://orcid.org/0000-0001-9786-1023, Krestnikov, I. and Kovsh, A. 2007. Ultrafast carrier dynamics in p-doped InAs/GaAs quantum-dot amplifiers. IET Optoelectronics 1 (6) , pp. 298-302. 10.1049/iet-opt:20070040

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Abstract

Using a differential transmission pump-probe experiment in heterodyne detection, the ultrafast gain and refractive-index dynamics of the ground-state transition in InAs/GaAs quantum- dot amplifiers emitting near 1.3 mum at working condition, that is at room temperature and under electrical injection were measured. An ultrafast gain recovery on a subpicosecond time scale is observed at high electrical injection indicating fast carrier relaxation into the dot ground state, which is appealing for high-speed applications with these devices. Comparing p-doped and undoped devices of otherwise identical structure and operating at the same gain, a faster absorption recovery but a slower gain dynamics in p-doped amplifiers was observed. This finding should help in elucidating the role of p-doping in the design of QD-based devices with high-speed performances.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Biosciences Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IEEE
ISSN:	1751-8768
Last Modified:	25 Oct 2022 09:39
URI:	https://orca.cardiff.ac.uk/id/eprint/59496

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