Cesari, Valentina, Borri, Paola  ORCID: https://orcid.org/0000-0002-7873-3314, Fiore, A., Rossetti, M., Mikhrin, S., Langbein, Wolfgang Werner ORCID: https://orcid.org/0000-0001-9786-1023, Krestnikov, I. and Kovsh, A.
2007.
Ultrafast carrier dynamics in p-doped InAs/GaAs quantum-dot amplifiers.
IET Optoelectronics
1
(6)
, pp. 298-302.
10.1049/iet-opt:20070040
|
Abstract
Using a differential transmission pump-probe experiment in heterodyne detection, the ultrafast gain and refractive-index dynamics of the ground-state transition in InAs/GaAs quantum- dot amplifiers emitting near 1.3 mum at working condition, that is at room temperature and under electrical injection were measured. An ultrafast gain recovery on a subpicosecond time scale is observed at high electrical injection indicating fast carrier relaxation into the dot ground state, which is appealing for high-speed applications with these devices. Comparing p-doped and undoped devices of otherwise identical structure and operating at the same gain, a faster absorption recovery but a slower gain dynamics in p-doped amplifiers was observed. This finding should help in elucidating the role of p-doping in the design of QD-based devices with high-speed performances.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Biosciences Schools > Physics and Astronomy |
| Subjects: | Q Science > QC Physics |
| Publisher: | IEEE |
| ISSN: | 1751-8768 |
| Last Modified: | 25 Oct 2022 09:39 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/59496 |
Citation Data
Cited 11 times in Scopus. View in Scopus. Powered By Scopus® Data
Actions (repository staff only)
 |
Edit Item |
Dimensions
Dimensions