Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures

Sandall, I. C., Walker, C. L., Hopkinson, M., Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842, Liu, H. Y. and Mowbray, D. J. 2006. Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures. IEE Proceedings Optoelectronics 153 (6) , pp. 316-320. 10.1049/ip-opt:20060042

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Abstract

The segmented contact method is used to study the performance of intrinsic and p-doped quantum dot structures emitting at 1.3 mum. From measurements of the absorption, it is shown that despite being doped to a level of 18 acceptor atoms per dot, only 19% of the quantum dot states are filled by excess holes, illustrating the importance of the continuum states in the wetting layer. We directly measure the modal gain and non-radiative recombination and show that the modal gain is increased as a function of transparency point when p-dopants are introduced without a significant increase in non-radiative recombination. These results explain the 65% reduction in threshold current observed for uncoated 1500 mum long devices at 300 K.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Institution of Engineering and Technology
ISSN:	1350-2433
Last Modified:	25 Oct 2022 09:39
URI:	https://orca.cardiff.ac.uk/id/eprint/59516

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