Recombination mechanisms in 1.3-μm InAs quantum-dot lasers

Sandall, I. C., Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842, Walker, C. L., Liu, H. Y., Hopkinson, M. and Mowbray, D. J. 2006. Recombination mechanisms in 1.3-μm InAs quantum-dot lasers. IEEE Photonics Technology Letters 18 (8) , pp. 965-967. 10.1109/LPT.2006.873560

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Abstract

We measure, in real units, the radiative and total current density in high performance 1.3-μm InAs quantum-dot-laser structures. Despite very low threshold current densities, significant nonradiative recombination (∼80% of the total recombination) occurs at 300 K with an increasing fraction at higher current density and higher temperature. Two nonradiative processes are identified; the first increases approximately linearly with the radiative recombination while the second increases at a faster rate and is associated with the loss of carriers to either excited dot states or the wetting layer.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IEEE
ISSN:	1041-1135
Last Modified:	25 Oct 2022 09:39
URI:	https://orca.cardiff.ac.uk/id/eprint/59521

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