Sandall, I. C., Smowton, Peter Michael ![]() |
Official URL: http://dx.doi.org/10.1109/LPT.2006.873560
Abstract
We measure, in real units, the radiative and total current density in high performance 1.3-μm InAs quantum-dot-laser structures. Despite very low threshold current densities, significant nonradiative recombination (∼80% of the total recombination) occurs at 300 K with an increasing fraction at higher current density and higher temperature. Two nonradiative processes are identified; the first increases approximately linearly with the radiative recombination while the second increases at a faster rate and is associated with the loss of carriers to either excited dot states or the wetting layer.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Publisher: | IEEE |
ISSN: | 1041-1135 |
Last Modified: | 25 Oct 2022 09:39 |
URI: | https://orca.cardiff.ac.uk/id/eprint/59521 |
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