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Energy distributions of carriers in quantum dot laser structures

Osborne, Simon W., Blood, Peter, Smowton, Peter Michael ORCID:, Lutti, Julie, Xin, Y. C., Stintz, Andreas, Huffaker, Diana L. and Lester, Luke F. 2004. Energy distributions of carriers in quantum dot laser structures. Presented at: Physics and Simulation of Optoelectronic Devices XI, San Jose, CA, USA, 26 January 2003. Published in: Osinski, M., Amano, H. and Henneberger, F. eds. Physics and simulation of optoelectronic devices XII. Proceedings of SPIE (5349) Bellingham, WA: SPIE, p. 63. 10.1117/12.540314

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Using the segmented contact method, we have measured the passive modal absorption, modal gain and spontaneous emission spectra of an InAs "dot-in-well" (DWELL) system where the inhomogeneous broadening is sufficiently small that the ground and excited state transitions can be spectrally resolved. The modal optical gain from the ground state saturates with current at a maximum value of one third of the magnitude of the measured absorption. The population inversion factor spectrum, obtained from the measured gain and emission spectra, shows that the carrier distributions cannot be described by a single global Fermi distribution. However, the inversion factor spectrum can be described by a system where the ground state and excited state occupancies are each described by a Fermi distribution but with different quasi-Fermi energy separations.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: SPIE
ISBN: 9780819493880
ISSN: 0277786X
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Last Modified: 25 Oct 2022 09:40

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