Formation and relaxation of exciton-carbon acceptor complexes in GaAs

Grassi Alessi, M., Patanè, A., Polimeni, A., Capizzi, M., Martelli, F., Borri, Paola ORCID: https://orcid.org/0000-0002-7873-3314, Gurioli, M. and Colocci, M. 1997. Formation and relaxation of exciton-carbon acceptor complexes in GaAs. Physical Review B 56 (7) , pp. 3834-3837. 10.1103/PhysRevB.56.3834

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Abstract

Photoluminescence excitation (PLE) measurements have been performed in several GaAs-based structures by monitoring the electron-carbon acceptor and the exciton bound to carbon recombinations. In both cases we show that the separate capture of free carriers makes the main contribution to the electron-carbon transition and to the formation of the bound exciton. A dip is indeed observed in the PLE spectra at the energy of the free exciton. The contribution of the bound exciton relaxation to the two-hole transition is pointed out.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Biosciences Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Physical Society
ISSN:	0163-1829
Last Modified:	25 Oct 2022 09:42
URI:	https://orca.cardiff.ac.uk/id/eprint/59704

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