Carrier transfer between InGaAs/GaAs quantum wells separated by thick barriers

Borri, Paola ORCID: https://orcid.org/0000-0002-7873-3314, Guriolo, M., Colocci, M., Patanè, A., Alessi, M. Grassi, Capizzi, M. and Martelli, F. 1997. Carrier transfer between InGaAs/GaAs quantum wells separated by thick barriers. Physica Status Solidi (a) 164 (1) , pp. 227-230. 10.1002/1521-396X(199711)164:1<227::AID-PSSA227>3.0.CO;2-X

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Abstract

We have studied the carrier transfer between two adjacent wells of different width separated by a 100 nm thick barrier. At low temperatures (T < 30 K) the transfer has very little dependence (if any) on T. For T > 30 K, the transfer strongly increases, denoting that the thermal escape out of the QW becomes the main mechanism. Finally, a drastic quenching of the transfer is found for temperatures higher than 50 to 70 K, suggesting the activation of a further non-radiative channel different from the thermal escape.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Biosciences Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Wiley
ISSN:	1862-6319
Last Modified:	25 Oct 2022 09:42
URI:	https://orca.cardiff.ac.uk/id/eprint/59708

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