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Carrier transfer between InGaAs/GaAs quantum wells separated by thick barriers

Borri, Paola, Guriolo, M., Colocci, M., Patanè, A., Alessi, M. Grassi, Capizzi, M. and Martelli, F. 1997. Carrier transfer between InGaAs/GaAs quantum wells separated by thick barriers. Physica Status Solidi (a) 164 (1) , pp. 227-230. 10.1002/1521-396X(199711)164:1<227::AID-PSSA227>3.0.CO;2-X

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We have studied the carrier transfer between two adjacent wells of different width separated by a 100 nm thick barrier. At low temperatures (T < 30 K) the transfer has very little dependence (if any) on T. For T > 30 K, the transfer strongly increases, denoting that the thermal escape out of the QW becomes the main mechanism. Finally, a drastic quenching of the transfer is found for temperatures higher than 50 to 70 K, suggesting the activation of a further non-radiative channel different from the thermal escape.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Wiley
ISSN: 1862-6319
Last Modified: 02 May 2019 11:19

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