Chastaingt, B., Gurioli, M., Borri, Paola  ORCID: https://orcid.org/0000-0002-7873-3314, Colocci, M., Neu, G., Deparis, C., Massies, J. and Martinez-Pastor, J.
1997.
Controlled type-I-type-II transition in GaAs/AlAs/AlxGa1-xAs double-barrier quantum wells.
Physical Review B
55
(4)
, pp. 2393-2400.
10.1103/PhysRevB.55.2393
|
Abstract
We show that the insertion of extremely narrow AlAs layers in double-barrier GaAs/AlAs/AlxGa1-xAs quantum wells results in a variety of electronic configurations, thus providing a powerful tool for tailoring the electronic transitions in GaAs heterostructures. In particular, the transition from type-I to type-II recombination is shown to occur in correspondence with variations by a single monolayer in the thickness of the AlAs and/or GaAs layers. Drastic changes in the recombination lifetimes are correspondingly observed; at the same time, the photoluminescence efficiency is found to be almost independent of the type-I–type-II character of the transition.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Biosciences Schools > Physics and Astronomy |
| Subjects: | Q Science > QC Physics |
| Publisher: | American Physical Society |
| ISSN: | 0163-1829 |
| Last Modified: | 25 Oct 2022 09:42 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/59716 |
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