Controlled type-I-type-II transition in GaAs/AlAs/AlxGa1-xAs double-barrier quantum wells

Chastaingt, B., Gurioli, M., Borri, Paola ORCID: https://orcid.org/0000-0002-7873-3314, Colocci, M., Neu, G., Deparis, C., Massies, J. and Martinez-Pastor, J. 1997. Controlled type-I-type-II transition in GaAs/AlAs/AlxGa1-xAs double-barrier quantum wells. Physical Review B 55 (4) , pp. 2393-2400. 10.1103/PhysRevB.55.2393

Full text not available from this repository.

Abstract

We show that the insertion of extremely narrow AlAs layers in double-barrier GaAs/AlAs/AlxGa1-xAs quantum wells results in a variety of electronic configurations, thus providing a powerful tool for tailoring the electronic transitions in GaAs heterostructures. In particular, the transition from type-I to type-II recombination is shown to occur in correspondence with variations by a single monolayer in the thickness of the AlAs and/or GaAs layers. Drastic changes in the recombination lifetimes are correspondingly observed; at the same time, the photoluminescence efficiency is found to be almost independent of the type-I–type-II character of the transition.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Biosciences Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Physical Society
ISSN:	0163-1829
Last Modified:	25 Oct 2022 09:42
URI:	https://orca.cardiff.ac.uk/id/eprint/59716

Citation Data

Cited 10 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item