Well-width dependence of exciton-phonon scattering in InxGa1-xAs/GaAs single quantum wells

Borri, Paola ORCID: https://orcid.org/0000-0002-7873-3314, Langbein, Wolfgang Werner ORCID: https://orcid.org/0000-0001-9786-1023, Hvam, J. and Martelli, F. 1999. Well-width dependence of exciton-phonon scattering in InxGa1-xAs/GaAs single quantum wells. Physical Review B 59 (3) , pp. 2215-2222. 10.1103/PhysRevB.59.2215

Full text not available from this repository.

Abstract

The temperature and density dependencies of the exciton dephasing time in In0.18Ga0.82As/GaAs single quantum wells with different thicknesses have been measured by degenerate four-wave mixing. The exciton-phonon scattering contribution to the dephasing is isolated by extrapolating the dephasing rate to zero-exciton density. From the temperature dependence of this rate we have deduced the linewidth broadening coefficients for acoustic and optical phonons. We find acoustic-phonon coefficients that increase from 1.6 to 3 μeV/K when increasing the well width from 1 to 4 nm. This is in quantitative agreement with theoretical predictions when the spatial extension of the exciton wave function, strongly penetrating into the GaAs barrier in thin InxGa1-xAs quantum wells, is taken into account. The optical-phonon coefficient does not show a systematic dependence on well thickness, and is comparable with the value for bulk GaAs.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Biosciences Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Physical Society
ISSN:	0163-1829
Last Modified:	25 Oct 2022 09:43
URI:	https://orca.cardiff.ac.uk/id/eprint/59753

Citation Data

Cited 70 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item