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Spectral hole-burning and carrier-heating dynamics in quantum-dot amplifiers: comparison with bulk amplifiers

Borri, Paola ORCID: https://orcid.org/0000-0002-7873-3314, Langbein, Wolfgang Werner ORCID: https://orcid.org/0000-0001-9786-1023, Hvam, J. M., Heinrichsdorff, F., Mao, M.-H. and Bimberg, D. 2001. Spectral hole-burning and carrier-heating dynamics in quantum-dot amplifiers: comparison with bulk amplifiers. Physica Status Solidi (b) 224 (2) , pp. 419-423. 10.1002/1521-3951(200103)224:2<419::AID-PSSB419>3.0.CO;2-J

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Abstract

The ultrafast gain dynamics in an electrically pumped InAs/InGaAs/GaAs quantum-dot amplifier are measured at room temperature with femtosecond resolution, and compared with results on an InGaAsP bulk amplifier. The role of spectral hole burning and carrier heating in the recovery of the gain compression is investigated. Reduced carrier heating for both gain and refractive index dynamics of the quantum-dot device is found, which is a promising prerequisite for high-speed applications.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Wiley-Blackwell
ISSN: 0370-1972
Last Modified: 25 Oct 2022 09:44
URI: https://orca.cardiff.ac.uk/id/eprint/59803

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