Dephasing in InAs/GaAs quantum dots

Borri, Paola ORCID: https://orcid.org/0000-0002-7873-3314, Langbein, Wolfgang Werner ORCID: https://orcid.org/0000-0001-9786-1023, Mørk, J., Hvam, J. M., Heinrichsdorff, F., Mao, M. -H. and Bimberg, D. 1999. Dephasing in InAs/GaAs quantum dots. Physical Review B 60 (11) , 7784 -7787. 10.1103/PhysRevB.60.7784

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Abstract

The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of 290±80 fs from spectal-hole burning and of 260±20 fs from four-wave mixing.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy Schools > Biosciences
Subjects:	Q Science > QC Physics
Publisher:	American Physical Society
ISSN:	0163-1829
Last Modified:	25 Oct 2022 09:48
URI:	https://orca.cardiff.ac.uk/id/eprint/60039

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