Borri, Paola ![]() ![]() |
Abstract
We present temperature-dependent measurements of the dephasing time in the ground-state transition of strongly-confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. At low temperature we measure a dephasing time of several hundred picoseconds. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian lineshape with a sharp zero-phonon line and a broad band from elastic exciton-acoustic phonon interactions. We also explore the dephasing time beyond the one exciton occupation, by electrically injecting carriers. Electrical injection into the barrier region results in a dominantly pure dephasing of the excitonic ground-state transition. Once the injected carriers have filled the electronic ground state, additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy Biosciences |
Subjects: | Q Science > QC Physics |
Uncontrolled Keywords: | quantum dots; III-V semiconductors; ultrafast spectroscopy; four-wave mixing; exciton-phonon; interaction |
Publisher: | SPIE, |
ISBN: | 0819448249 |
Last Modified: | 25 Oct 2022 09:49 |
URI: | https://orca.cardiff.ac.uk/id/eprint/60150 |
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