Frequency scalable large signal transistor behavioral model based on admittance domain formulation

Koh, M., Bell, James Joseph ORCID: https://orcid.org/0000-0002-4815-2199, Williams, D., Patterson, A., Lees, Jonathan ORCID: https://orcid.org/0000-0002-6217-7552, Root, D. E. and Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830 2014. Frequency scalable large signal transistor behavioral model based on admittance domain formulation. Presented at: International Microwave Symposium, Tampa, Florida, 1-6 June 2014. 2014 IEEE MTT-S International Microwave Symposium (IMS). Picastaway, NJ: IEEE, pp. 1-3. 10.1109/MWSYM.2014.6848287

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Abstract

This paper introduces the first formulation and approach that enables measurement based non-linear behavioral look-up table transistor models to be frequency scalable. The experimental results on a M/A-COM GaN HFET from 2 GHz to 8 GHz, support theoretical analysis that frequency domain behavioral models defined in the admittance domain have frequency scalable model coefficients. Load-pull results indicate that the model can accurately predict non-linear behavior at frequencies where the large signal measurements were not performed.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Schools > Engineering
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Publisher:	IEEE
Last Modified:	27 Oct 2022 09:06
URI:	https://orca.cardiff.ac.uk/id/eprint/64356

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