X-band MMIC scalable large signal model based on unit cell behavioral data model and passive embedding network

Koh, M., Bell, James J. ORCID: https://orcid.org/0000-0002-4815-2199, Williams, D., Patterson, A., Wohlmuth, W., Lees, Jonathan ORCID: https://orcid.org/0000-0002-6217-7552 and Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830 2013. X-band MMIC scalable large signal model based on unit cell behavioral data model and passive embedding network. Presented at: International Microwave Symposium, Seattle, WA, 2-7 June 2013. 2013 IEEE MTT-S International Microwave Symposium Digest (IMS). Picastaway, NJ: IEEE, pp. 1-4. 10.1109/MWSYM.2013.6697424

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Abstract

This paper combines the advantages of accurate measurement based non-linear behavioral look-up table transistor models with passive embedding networks to develop a scalable large signal model. This approach provides for a more robust utilization of measurement based data models in X-band MMIC design by providing accurate performance predictions as a function of gate periphery and at power levels beyond the limitations of high frequency measurement systems. An example is provided where a 1 W Gallium Nitride reference device, characterized in Class B at 9 GHz, delivering over 70% efficiency, is used to accurately predict the behavior of devices with up to 5 times larger gate periphery.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Schools > Engineering
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Publisher:	IEEE
ISBN:	9781467361774
ISSN:	0149-645X
Last Modified:	12 Jun 2025 16:54
URI:	https://orca.cardiff.ac.uk/id/eprint/64359

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