Ogboi, Friday Lawrence, Tasker, Paul J. ![]() ![]() ![]() |
Abstract
Baseband injection provides a useful approach for use in linearizing power amplifiers. The challenge is the determination of the required baseband signal. In [6] a generalized formulation quantifying the baseband voltage signal, injected at the output bias port, to linearize the device behavior was introduced. This envelope domain based solution requires the determination of only a small number of linearizing coefficients. More importantly these coefficients should be stimulus, hence bandwidth independent. This property has been experimentally investigated using a 10W Cree GaN HEMT device under a 3-tone modulated stimulus at 1.5dB of compression. It will be shown that the linearization coefficients were invariant when varying the modulation bandwidth from 2MHz to 20MHz.
Item Type: | Conference or Workshop Item (Paper) |
---|---|
Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
Publisher: | IEEE |
Last Modified: | 27 Oct 2022 10:04 |
URI: | https://orca.cardiff.ac.uk/id/eprint/68805 |
Citation Data
Cited 1 time in Scopus. View in Scopus. Powered By Scopus® Data
Actions (repository staff only)
![]() |
Edit Item |