Reduction of baseband electrical memory effects using broadband active baseband load-pull

Chaudhary, Muhammad Akmal, Lees, Jonathan ORCID: https://orcid.org/0000-0002-6217-7552, Benedikt, Johannes ORCID: https://orcid.org/0000-0002-9583-2349 and Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830 2013. Reduction of baseband electrical memory effects using broadband active baseband load-pull. Presented at: 2013 IEEE International Wireless Symposium (IWS), Beijing, China, 14-18 April 2013. Wireless Symposium (IWS), 2013 IEEE International. IEEE, pp. 1-4. 10.1109/IEEE-IWS.2013.6616709

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Abstract

This paper presents an enhanced active baseband load-pull capability that allows constant, frequency independent baseband load environments to be presented across wide modulation bandwidths. This capability is critical in allowing the effects of baseband impedance variation has on the performance of nonlinear microwave devices, when are driven by broadband multi-tone stimuli, to be fully investigated. The experimental investigations were carried out using a 10W GaN HEMT device, under 9-carrier complex multi-tone excitation.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Engineering
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Publisher:	IEEE
ISBN:	9781467321419
Last Modified:	27 Oct 2022 10:04
URI:	https://orca.cardiff.ac.uk/id/eprint/68815

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