Hone, Thomas M., Bensmida, Souheil, Morris, Kevin A., Beach, Mark A., McGeehan, Joe P., Lees, Jonathan ![]() ![]() ![]() |
Abstract
A dedicated inverse Doherty amplifier is presented in this paper using commercially available 10W GaN HEMT devices. Results show that an emulated 1W peaking amplifier and a 10W carrier amplifier can be used to create a highly efficient amplification architecture. Ideal inverse active load-pull is introduced theoretically with experimental results showing good agreement with the theory. A generic characterization scan of the inverse Doherty amplifier yields state of the art drain and power added efficiency in the output power back-off. A drain and power added efficiency of 60% and 50% are obtained at 10dB output power back-off respectively with a maximum output power of 41dBm at 2.1GHz.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
Publisher: | IEEE |
ISBN: | 9781467329156 |
Last Modified: | 27 Oct 2022 10:04 |
URI: | https://orca.cardiff.ac.uk/id/eprint/68818 |
Citation Data
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