Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy

Losurdo, Maria, Giangregorio, Maria M., Bruno, Giovanni, Kim, Tong-Ho, Wu, Pae, Choi, Soojeong, Brown, April, Masia, Francesco ORCID: https://orcid.org/0000-0003-4958-410X, Capizzi, M. and Polimeni, A. 2007. Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy. Applied Physics Letters 90 (1) , 011910-011910. 10.1063/1.2424664

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Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Institute of Physics
ISSN:	0003-6951
Last Modified:	27 Oct 2022 10:14
URI:	https://orca.cardiff.ac.uk/id/eprint/69458

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