Biexciton binding energy in ZnSe quantum wells and quantum wires

Wagner, H. P., Tranitz, H.-P., Langbein, Wolfgang Werner ORCID: https://orcid.org/0000-0001-9786-1023, Hvam, J. M., Bacher, G. and Forchel, A. 2002. Biexciton binding energy in ZnSe quantum wells and quantum wires. physica status solidi (b) 231 (1) , pp. 11-18. 10.1002/1521-3951(200205)231:1<11::AID-PSSB11>3.0.CO;2-V

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Abstract

The biexciton binding energy EXX is investigated in ZnSe/ZnMgSe quantum wells and quantum wires as a function of the lateral confinement by transient four-wave mixing. In the quantum wells one observes for decreasing well width a significant increase in the relative binding energy, saturating for well widths less than 8 nm. In the quantum wires an increase of 30% is found in the smallest quantum wire structures compared to the corresponding quantum well value. A simple analytical model taking into account the quantum confinement in these low-dimensional systems is used to explain the experimentally observed dependence of the biexciton binding energies.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Wiley
ISSN:	15213951
Date of Acceptance:	16 November 2001
Last Modified:	28 Oct 2022 08:36
URI:	https://orca.cardiff.ac.uk/id/eprint/71413

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