The role of p-doping in the gain dynamics of InAs/GaAs quantum dots at low temperature

Cesari, Valentina, Langbein, Wolfgang ORCID: https://orcid.org/0000-0001-9786-1023 and Borri, Paola ORCID: https://orcid.org/0000-0002-7873-3314 2009. The role of p-doping in the gain dynamics of InAs/GaAs quantum dots at low temperature. Applied Physics Letters 94 (4) , 041110. 10.1063/1.3075855

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Abstract

We measured the gain dynamics of the ground-state transition at 20 K in an undoped and identically fabricated p-doped InAs/GaAs quantum-dot amplifier. The dynamics in the doped device is dominated by a very short ( ∼ 0.1 ps) and a very long ( ∼ 300 ps) time constant. These were attributed to hole and electron dynamics, respectively, and quantitatively described by a microstate model. By comparing the dynamics for the same modal gain in the two devices, the gain recovery was initially faster in the p-doped sample, attributed to ultrafast hole-hole scattering, but slower at later times due to the lack of an electron reservoir.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Institute of Physics
ISSN:	0003-6951
Last Modified:	11 May 2023 20:46
URI:	https://orca.cardiff.ac.uk/id/eprint/7256

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