Electronic transport in modulation-doped InSb quantum well heterostructures

Orr, J. M. S., Gilbertson, A. M., Fearn, M., Croad, O. W., Storey, C. J., Buckle, L., Emeny, M. T., Buckle, Philip Derek ORCID: https://orcid.org/0000-0001-9508-7783 and Ashley, T. 2008. Electronic transport in modulation-doped InSb quantum well heterostructures. Physical Review B 77 (16) , 165334. 10.1103/PhysRevB.77.165334

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Abstract

The mobility and carrier concentration of a number of InSb-based modulation-doped quantum well heterostructures are examined over a range of temperatures between 4.5 and 300 K. Wide well (30 nm) and narrow well (15 nm) structures are measured. The temperature dependent mobilities are considered within a scattering model that incorporates polar optical and acoustic phonon scatterings, interface roughness scattering, and scattering from charged impurities both in the three-dimensional background and within a distributed “quasi-two-dimensional” doping layer. Room temperature mobilities as high as 51 000 cm2/V s are reported for heterostructures with a carrier concentration of 5.8×1011 cm−2, while low-temperature mobility (below 40 K) reaches 248 000 cm2/V s for a carrier concentration of 3.9×1011 cm−2. A Schrödinger–Poisson model is used to calculate band structures in the material and is shown to accurately predict carrier concentrations over the whole temperature range. Low-temperature mobility is shown to be dominated by remote ionized impurity scattering in wide well samples and by a combination of ionized impurity and interface roughness scattering in narrow well samples

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Physical Society
ISSN:	1098-0121
Last Modified:	20 May 2023 18:16
URI:	https://orca.cardiff.ac.uk/id/eprint/7260

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